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Aug 24, 2026, 6:30 am182 ptsTop
Tom's Hardware
A research team at Kyoto University has built a silicon carbide (SiC) transistor that operates at 600°C (873 K) using ion implantation, the doping step used across commercial chip fabs, and cut the gap between its designed and measured threshold voltage to under 0.1V at 400°C, down from more than 2V in the…
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